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The TLP521-1GB is a photocoupler manufactured by Toshiba Semiconductor and Storage. It incorporates a gallium arsenide infrared emitting diode optically coupled to a silicon phototransistor. This configuration provides a high isolation voltage and efficient signal transfer, making it well-suited for applications that require electrical isolation between circuits.
The TLP521-1GB features a minimum isolation voltage of 5000 Vrms. The current transfer ratio (CTR) is specified to ensure efficient signal transmission under various operating conditions. The operating temperature range is typically from -55¡C to 100¡C. The package is a 4-pin DIP (Dual In-line Package). The input forward voltage is around 1.2V, and the output collector-emitter voltage can range up to 80V.
This photocoupler is commonly utilized in industrial automation, power supplies, and various other applications where electrical isolation is crucial for ensuring safety, reliability, and high performance. Its robust design and high isolation capability make it a preferred choice for isolating sensitive circuits and enhancing system performance.
APPLICATIONS:
Features:
Package Includes:
Model Number: TLP521-1
Type: optocoupler
Operating Temperature: – 25 C+ 85 C
Mounting Type: Surface mounting
Applications: optocoupler IC
Voltage – Forward (Vf) (Typ): 1.3 V
Current – DC Forward (If) (Max): 16 mA
Output Type: NPN Phototransistor
Insulation voltage: 2500 VRMs
Maximum collector: 0.4V
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NO warranty If the product is subject to misuse, tampering, static discharge, accident, water or fire damage, use of chemicals & soldered or altered in any way.
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