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FS8205 IC TSSOP 8

SKU: 26110 Categories: , Brand:
  • A compact, ultra-low on-resistance dual N-channel MOSFET in a TSSOP-8 package, optimized for high-density power management and battery protection in portable electronics.Ê

₹4.69 (Inc. GST)

₹3.97 (+18% GST Extra)

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Description

STN8205A is the dual N-Channel enhancement mode power field effect transistor which
is produced using high cell density, DMOS trench technology. This high density process
is especially tailored to minimize on-state resistance. These devices are particularly
suited for low voltage application, such as notebook computer power management and
other battery powered circuits, where high-side switching is required.

Features:

  • 20V/5.0A, RDS(ON) = 21m-ohm (Typ.) @VGS =4.5V
  • l 20V/3.0A, RDS(ON) =27m-ohm @VGS =2.5V
  • l Super high density cell design for extremely low RDS(ON)
  • l Exceptional low on-resistance and maximum DC current capability
  • l TSSOP-8 package design

 

Package Includes:

  • 1 x FS8205A Dual N-Channel Power MOSFET (TSSOP-8 SMD).

Specification

Model : FS8205A
Transistor Type : Dual N-Channel Enhancement Mode MOSFET
Drain-Source Voltage (VDS) : 20V
Continuous Drain Current (ID) : 6A (at 25¡C)
RDS(on) (at VGS = 4.5V) : 18m½ (Min) to 28m½ (Max)
RDS(on) (at VGS = 2.5V) : 23m½ (Min) to 37m½ (Max)
Gate Threshold Voltage (VGS(th)) : 0.5V to 1.5V
Gate-Source Voltage (VGS) : ±12V
Total Power Dissipation (PD) : 1.0W Ð 1.5W (Depending on layout)
Package Type : TSSOP-8 (Thin Shrink Small Outline Package)
Operating Junction Temperature : -55¡C to +150¡C

 

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