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IRF730-400V 5.5A N-Channel Power Mosfet

SKU: 26023 Categories: , Brand:
  • Dynamic dV/dt rating; N-Channel
  • Fast switching
  • Max Drain-Source Voltage: 400V
  • Max Gate-Source Voltage: + 20V
  • Max Continuous Drain Current, VGS @ 10 V, TC = 25 deg C: 5.5A

₹25.00 (Inc. GST)

₹21.19 (+18% GST Extra)

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Description

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. Features/Specs: Max Continuous Drain Current, VGS @ 10 V, TC = 25 deg C: 5.5A

Features:

  • High Voltage Rating: 400V capability for AC-DC power conversion.
  • Low On-Resistance: Optimized for reduced power dissipation during conduction.
  • Fast Switching Speed: Low gate charge and capacitances for high-frequency operation.
  • Robustness: 100% avalanche tested for protection against voltage transients.
  • Ease of Use: Simple gate drive requirements compatible with most ICs.

Package Includes:

  • 1 x IRF730 N-Channel Power MOSFET

Specification

Drain to Source Voltage : 400 Volts
Continuous Drain Current : 5.5 Amperes
Pulsed Drain Current : 22 Amperes
Gate to Source Voltage : 20 Volts
Drain Source On Resistance : 1.0 Ohms
Total Gate Charge : 38 nC
Power Dissipation : 74 Watts
Operating Temperature : -55 to 150 Degrees Celsius

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