AT45DB161E-SHD-T

The AT45DB161E-SHD-T is a “System Enhancing” Flash memory designed with an advanced dual SRAM buffer architecture. These buffers (512/528 bytes each) allow the device to receive data while a page in the main memory is being reprogrammed, ensuring seamless data flow in applications like digital voice recording or high-speed data logging. It supports a flexible page-erase architecture, allowing developers to erase as little as 256 or 512/528 bytes, which is significantly smaller than standard Flash solutions. It also offers Byte-write capabilities, effectively providing Serial EEPROM functionality within a Serial NOR Flash device.

Features:

• Dual SRAM Buffers:ÊTwo independent 512/528-byte buffers for high-speed, continuous data reception.
• High Performance:ÊSupports SPI and RapidSª interfaces with clock frequencies up toÊ85MHz.
• Flexible Erasure:ÊPage Erase (512/528B), Block Erase (4KB), Sector Erase (128KB), and full Chip Erase.
• Ultra-Low Power:ÊFeatures an ultra-deep power-down mode (0.4µA typical) and low-power read options.
• Advanced Security:ÊIncludes a 128-byte OTP Security Register (64 bytes factory programmed with a unique ID) and individual sector lockdown features.
• Durability:ÊHigh reliability with 100,000 program/erase cycles per sector and 20-year data retention.

Package Includes:

• 1 x AT45DB161E-SHD-T 16-Mbit Serial DataFlash IC (8-SOIC Wide Package).